IRFB4110PBF - 100V 130A 370W N-MOSFET Transistor
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Technical Data:
Transistor type: N-MOSFET
Technology: HEXFET®
Polarization: unipolar
Drain-source voltage: 100V
Drain Current: 130A
Dissipated power: 370W
Case: TO220AB
Gate-source voltage: ± 20V
Forward resistance: 4.5mΩ
Mounting: THT
Gate Charge: 150nC
Channel type: enriched
Product code
GL.003.772
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